Research Breakthrough Selected by Symposium on VLSI Technology as Highlight Paper
HSINCHU, Taiwan, June 17 /PRNewswire-Asia/ -- Macronix International Co., Ltd. (TSE: 2337), a leading provider of non-volatile memory semiconductor solutions, today announced its research results that provide a successful path to the most scalable and most efficient 3D NAND Flash using its patented BE-SONOS (barrier engineering) charge-trapping technology and 3D decoding architecture. Because of the important breakthrough, this Macronix's work addressing 3D NAND Flash has been chosen as one of the 8 highlight papers by the 2010 Symposium on VLSI Technology.
(Photo: http://www.prnasia.com/sa/2010/06/15/2010061516457.html )
In this paper, Macronix reports the fabrication and demonstration of an 8-layer, 75nm half-pitch, 3D VG (Vertical Gate) NAND Flash using a junction-free BE-SONOS device. The BE-SONOS charge-trapping device provides both high reliability and simple structure suitable for 3D. At an equivalent 0.0014 (um)2 cell size (near world record), Macronix's 3D VG NAND has shown no Z-directional interference, large read current, and large program window (7V) for MLC (Multi-level Cell) operation.
"Traditional NAND Flash will be facing technology barrier when it scales to below 2Xnm node," said C. Y. Lu, President of Macronix. "The three-dimensional memory cell array structure has been proposed to be the most promising candidate for NAND Flash to shrink to below 1Xnm. Macronix's 3D memory research results based on our own BE-SONOS technology have set a new milestone for next generation NAND Flash to meet high density capacity requirement."
Through detailed analyses on scalability, reading current (which determines read speed performance) and cross talk, Macronix's work has chosen the VG architecture, believing it is the best approach. Simulation shows this structure could be scaled to 25nm node in a 3D array, providing density far beyond conventional 2D NAND Flash.
Two technical papers from Macronix have been presented in the 2010 Symposium on VLSI Technology held in Honolulu June 15-17. In addition to the highlight paper addressing 3D NAND Flash (Paper 12.4 "A Highly Scalable
8-Layer 3D Vertical-Gate (VG) TFT NAND Flash Using Junction-Free Buried Channel BE-SONOS Device," Hang-Ting Lue, et al.), a paper discussing ReRAM technology (Paer 8.4 "A Novel TiTe Buffered Cu-GeSbTe/SiO2 Electrochemical Resistive Memory (ReRAM)", Y.-Y. Lin, et al.) has also been chosen.
About Macronix International Co., Ltd.
Founded in 1989, Macronix is a leading provider of innovative Non-Volatile Memory solutions. Macronix is the largest worldwide manufacturer of ROM products, and also provides a wide range of Parallel and Serial NOR Flash products across various densities. These products are used in vast range of consumer, computing, communications & networking, and industrial applications.http://www.macronix.com .
Media Contacts:
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Michelle Chang
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Tel: +886-3-578-6688 ext. 71233
Email: michellechang@mxic.com.tw
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Macronix Asia Limited.
Harrison Tu
General Manager
Tel: +81-44-246-9100
Email: harrisontu@mxic.com.tw
